s3phb70, three phase half controlled bridge modules/full controlled bridge type s3phb70g08b s3phb70g12b s3phb70g14b s3phb70g16b v rrm v 800 1200 1400 1600 v rsm v 900 1300 1500 1700 dimensions in mm (1mm=0.0394") s3phbd70, s3pfb70 s3phbd70g08 % s3phbd70g12 % s3phbd70g14 % s3phbd70g16 % s3pfb70g08b s3pfb70g12b s3pfb70g14b s3pfb70g16b s3phb70 s3phbd70 s3pfb70 symbol test conditions maximum ratings unit tc=85 o c, module module per leg 70 70 36 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 550 600 500 550 a i fsm, i tsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 1520 1520 1250 1250 a 2 s i (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =500us t p = 10ms 10 5 1 w i dav i davm o c t vj t vjm t stg -40...+125 125 -40...+125 v isol 50/60hz, rms t=1min i isol <1ma t=1s 2500 3000 v~ m d mounting torque (m5) (10-32 unf) _ nm/lb.in. weight 95 g t vj =125 o c repetitive, i t =50a f=50hz, t p =200us v d =2/3v drm i g =0.3a non repetitive, i t =1/2 di g /dt=0.3a/us i frms, i trms 2 t . i dav 5 15 % 44 15 % typical p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
symbol test conditions characteristic values unit v v t 0 v f 0 i tm , i fm =70a;t vj =25 o c for every chip 1.64 v to for power-loss calculations only 0.85 v r t 11 m v d =6v; t vj =25 o c t vj =-40 o c v gt 1.5 1.6 v v d =6v; t vj =25 o c t vj =-40 o c i gt 100 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.2 v i gd 5 ma i h t vj =25 o c; v d =6v; r gk = 200 ma t vj =25 o c; t p =10us i g =0.45a; di g /dt=0.45a/us 450 ma i l per thyristor/diode; dc current per module r thjc 0.9 0.15 k/w per thyristor/diode; dc current per module r thjk 1.1 0.157 k/w d s creeping distance on surface 16.1 mm d a strike distance through air 7.5 mm a maximum allowable acceleration 50 m/s 2 i d, i r t vj =t vjm ; v r =v rrm ; v d =v drm 5 ma t vj =25 o c; v d =1/2v drm i g =0.45a; di g /dt=0.45a/us t gd 2 us t vj =t vjm ; i t =20a; t p =200us; -di/dt=10a/us typ. v r =100v; dv/dt=15v/us; v d =2/3v drm t q 250 us i rm 45 a features * low forward voltage drop * package with copper base plate * glass passivated chips * isolation voltage 3000 v~ * 1/4''fast-on power terminals advantages * space and weight savings * easy to mount with two screws * improved temperature and power cycling capability * small and light weight applications * input rectifiers for pwm inverter * supplies fir dc power equipment * field supply for dc motors * battery dc power supplies s3phb70, three phase half controlled bridge modules/full controlled bridge s3phbd70, s3pfb70 * ul file no.e310749 * rohs compliant p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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